Personal webpage of Jürgen Burin

Jürgen Burin

About me

I am a physics enthusiast with a broad background in informatics and electrical engineering. My research focuses on a wide range of topics, from gate level circuit analysis to TCAD simulations of integrated sensor devices. Overall, my work is focused around utilizing basic physical knowledge to understand investigated behavior and design devices the show the desired one. In my current position I am investigating silicon carbide, a very promising candidate for low power, radiation resistant applications.

Environmental protection is a very important topic to me. For this reason I always search for ways to reduce power consumption and waste on all levels. I spend my spare time with fixing broken equipment of any kind, woodworking and as an active part of the local voluntary fire fighters.

Contact

email: juergen.burin(at)oeaw.ac.at

Activities

Recombination

November 27th 2024: Finishing the chapter about charge carrier recombination of our literature review took some time but it is finally here. A wide range of Shockley-Read-Hall lifetimes were found in literature, indicating its tight connection to the individual devices. Temperature and doping dependency combined with bimolecular and Auger recombination are investigated as well.

Band Gap

November 4th 2024: The next chapter of our literature review on 4H-SiC TCAD parameters is available. It deals with the band gap. Our results suggest that the most commonly used values go back to measurements in 1964, which were transformed in various fashions until today.

Density-of-States Mass

October 16th 2024: The next chapter of our literature review on 4H-SiC TCAD parameters is available. It deals with the density-of-states mass. This topic turns out to be well researched but the available values show a significant spread.

Incomplete Ionization

October 10th 2024: In this chapter of our literature review on 4H-SiC TCAD parameters we investigate Incomplete Ionization. Due to the wide bandgap of 4H-SiC (more on this topic later) not all dopants are ionized, which results in less free charge carriers.

Impact Ionization

October 1st 2024: The next chapter of our literature review on 4H-SiC TCAD parameters is available. It focuses on the topic of Impact Ionization.

permittivity

September 23rd 2024: We are currently working on a large literature review of TCAD parameters in 4H-SiC. Here is the first chapter about the permittivity.

We will regularly publish the succeeding chapters on mobility, incomplete/impact ionization, bandgap, charge carrier effective masses and recombination on this page. So stay tuned!